R&D Projects
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Experimental development of MOCVD equipments for high temperature growth of A(III)B(V) semiconductors
16/8/2017Development of the high-temperature MOCVD reactor for A(III)B(V) layers on substrates up to 250 mm diameter and its design optimization based on specific metal-nitride layers growth(GaN, AlN, InN) using fluid-dynamic modelling
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High temperature processes in SiC semiconductor technology
Research and development of SiC VTR with support of Technology Agency of the Czech Republic – Project FW10010021 in TREND...read more
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New Czech-Japan R&D project: ALD reactor for Minimal Fab design
SVCS Process Innovation and HORIBA STEC will cooperate in the development of Minimal Fab design of the Plasma Enhanced Atomic...read more
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New plasma-activated ALD system with a unique source of low-temperature plasma
SVCS Process Innovation and ISAC research teams will design together a plasma based ALD and ALEt equipment. The research will start with the standard ALD reactor design produced by ISAC, and plasma generation systems, gas and precursor distribution and controlling skills will be provided by SVCS.
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New design of the production
The major design improvements include smooth lines of the frames that simplify the construction and bring new modern image
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