High temperature processes in SiC semiconductor technology

Research and development of  SiC VTR  with support of Technology Agency of the Czech Republic – Project FW10010021 in TREND Programme (01/2024 to 12/2025)

The project goal is to develop a prototype device for activating impurities in SiC substrates at temperatures of 1600 to 2000 °C.

Initially, attention will be focused on the high-temperature reactor itself, which will be fitted to the frame of the existing vertical Si technology furnace. Tests of the heating system control, temperature calibration and vacuum tightness will be carried out.

The aim of the reactor prototype is to identify possibilities for improving the design for the final device with a new frame design enabling its relatively easy assembly and simple maintenance. A unit for automatic loading of SiC substrates will also be developed for the prototype of the final “activator”. In addition to the necessary electronics and power sources for powering the heating elements, the frame of the device prototype will also contain a gas panel, a vacuum system and a water cooling panel.

Estimated reactor concept

• Vertical type of furnace
• Temp. 1600 ⁰C – 2000 ⁰C
• Graphite tube and liner
• Graphite heaters (3 zones)
• Graphite electrical contacts
• Graphite boat
• Graphite insulation pedestal
• Graphite chamber insulation
• Water-cooled vacuum stainless steel reactor jacket and flanges
• 25-50 pcs SiC wafers
• 6“ or 8“ SiC wafers
• Robotic wafer loading

Primary participant of the Project: SVCS Process Innovation, Optátova 37, 637 00 Brno

Secondary participant of the Project: VUT-CEITEC, Antonínská 548, 602 00 Brno